Effect of low-temperature annealing on the crystallinity of III-V-based diluted magnetic semiconductors

被引：5

作者：

Hashimoto, Y ^{[1
]}

Hayashi, T ^{[1
]}

Katsumoto, S ^{[1
]}

Iye, Y ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

molecular beam epitaxy; magnetic materials; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)02063-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low-temperature annealing after molecular-beam epitaxial growth of HI-V-based diluted magnetic semiconductors, (Ga,Mn)As and (In,Mn)As have been found to improve the crystallinity of the films. That is, the Curie temperature and the conductivity are greatly enhanced. This effect is probably due to the removal of excess As atoms which passivate doped Mn acceptors. The present method provides a way for carrying out reproducible systematic studies of these materials. (C) 2002 Published by Elsevier Science B.V.

引用

收藏

页码：1334 / 1338

页数：5

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