InAsSb/lnAsSbP light emitting diodes for the detection of CO and CO2 at room temperature

被引：31

作者：

Gao, HH ^{[1
]}

Krier, A

Sherstnev, V

Yakovlev, Y

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] AF Ioffe Physicotech Inst, St Petersburg 195279, Russia

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1999年 / 32卷 / 15期

关键词：

D O I：

10.1088/0022-3727/32/15/302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This report describes the epitaxial growth and fabrication of room-temperature InAs0.89Sb0.11/InAs0.48Sb0.22P0.30 semiconductor light emitting diodes operating in the mid-infrared wavelength region near 4.5 mu m. The InAs0.89Sb0.11 ternary material used in the light emitting diode active region has a large lattice mismatch with respect to the InAs substrate layer and in order to accommodate this it was necessary to grow a buffer layer with an intermediate composition (InAs0.94Sb0.06). The devices exhibit infrared emission at 4.5 mu m and could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 mu m and carbon dioxide at 4.2 mu m in various applications.

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页码：1768 / 1772

页数：5

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