Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films -: art. no. 042901

被引：114

作者：

Oligschlaeger, R ^{[1
]}

Waser, R

Meyer, R

Karthäuser, S

Dittmann, R

机构：

[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52074 Aachen, Germany

[2] FZ Juelich, CNI, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 04期

关键词：

D O I：

10.1063/1.2162860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on resistive switching of capacitor-like SrRuO3/Ba0.7Sr0.3TiO3/Pt thin films epitaxially grown on SrTiO3 substrates. We observe a weak but stable hysteresis in the current-voltage curve. By applying short voltage pulses, a high or low resistive state as well as intermediate states can be addressed even at room temperature. We demonstrate a multiple-branch hysteresis curve corresponding to multilevel switching modus revealing different subloops for different write voltages. Furthermore reliability issues such as cycling endurance and data retention are presented. Read-write operations over 10 000 cycles show a fatigue-like drift of both resistance states. No data loss is found upon continuous readout.

引用

页码：1 / 3

页数：3

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