Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future NAND Flash Memory

被引：13

作者：

Ho, Ching Yuan ^{[1
,2
]}

Lien, Chenhsin ^{[2
]}

Sakamoto, Y. ^{[1
]}

Yang, Ru Jye ^{[1
]}

Fijita, Hiro ^{[1
]}

Liu, C. H. ^{[1
]}

Lin, Y. M. ^{[1
]}

Pittikoun, S. ^{[1
]}

Aritome, S. ^{[1
]}

机构：

[1] Powerchip Semicond Corp, Memory Technol Ctr, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 11期

关键词：

Data retention; interpoly dielectric (IPD); plasma nitridation; programming speed;

D O I：

10.1109/LED.2008.2004972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, plasma nitridation and oxidation on interpoly dielectric (IPD; SiO2-SiN-SiO2) for cell programming speed and reliabilities are investigated. Nitrided top oxide with N-2 plasma shows excellent physical and electrical properties in terms of edge profile on IPD and fast programming voltage. However, plasma nitridation on a floating gate suffers from data retention problems that result from nitridelike residue along the word line. A method to densify and reoxidize bottom oxide with O-2 plasma oxidation is proposed for leakage path inhibition and data retention improvement.

引用

页码：1199 / 1202

页数：4

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