The TEOS oxide deposited on phosphorus in-situ/POCl3 doped polysilicon with rapid thermal annealing in N2O

被引：17

作者：

Kao, CH ^{[1
]}

Lai, CS

Lee, CL

机构：

[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Tao Yuan, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 09期

关键词：

N2O; phosphorus-in-situ; TEOS;

D O I：

10.1109/16.711357

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a TEOS oxide deposited on the phosphorus-in-situ doped polysilicon with rapid thermal N2O annealing, The oxide exhibits good electron trapping characteristics with a charge-to-breakdown (Q(bd)) up to 110 C/cm(2). It is due to the good polysilicon/oxide interface morphology obtained by replacing POCl3 doping with in-situ doping and the rapid thermal annealing in N2O, In addition, the N2O annealing densifies the deposited oxide and incorporates nitrogen into the oxide and at the polysilicon/oxide interface, thus improving the electrical characteristics.

引用

页码：1927 / 1933

页数：7

共 17 条

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