High UV/visible rejection contrast AlGaN/GaN MIS photodetectors

被引：26

作者：

Chang, PC ^{[1
]}

Chen, CH

Chang, SJ

Su, YK

Yu, CL

Huang, BR

Chen, PC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[3] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

[4] Natl Yunlin Univ Sci & Technol, Dept & Inst Elect Engn, Yunlin, Taiwan

[5] Nan Jeon Inst Technol, Dept Elect Engn, Yan Hsui 737, Taiwan

来源：

THIN SOLID FILMS | 2006年 / 498卷 / 1-2期

关键词：

GaN; photo-CVD; photodetector;

D O I：

10.1016/j.tsf.2005.07.094

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN-based metal-insulator-semiconductor (MIS) AlGaN/GaN ultraviolet (UV) photodetectors with photo-chemical vapor deposition (Photo-CVD) SiO2 insulator and AR-coating layer were fabricated. It was found that with a 5 V applied bias, photocurrent to dark current contrast ratio was 1.27 x 10(4) for the MIS photodetector with AR-coating. It was also found that UV-to-visible rejection ratio of such MIS photodetector with AR-coating was more than 3 orders of magnitude while the responsivity was 0.144 A/W with a 5 V applied bias and a 3 50 nm incident light wavelength. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：133 / 136

页数：4

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