High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

被引：18

作者：

Chen, CH

Chang, SJ

Su, YK

机构：

[1] Cheng Shiu Inst Technol, Dept Elect Engn, Kaohsiung 833, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

InGaN/GaN; LED; PL; EL; high indium content;

D O I：

10.1143/JJAP.42.2281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/ GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.

引用

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页码：2281 / 2283

页数：3

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