Electric field induced avalanche breakdown and non-volatile resistive switching in the Mott Insulators AM4Q8

被引：17

作者：

Corraze, B. ^{[1
]}

Janod, E. ^{[1
]}

Cario, L. ^{[1
]}

Moreau, P. ^{[1
]}

Lajaunie, L. ^{[1
]}

Stoliar, P. ^{[1
,2
,3
]}

Guiot, V. ^{[1
]}

Dubost, V. ^{[4
]}

Tranchant, J. ^{[1
]}

Salmon, S. ^{[1
]}

Besland, M. -P. ^{[1
]}

Phuoc, V. Ta ^{[5
]}

Cren, T. ^{[4
]}

Roditchev, D. ^{[4
]}

Stephant, N. ^{[1
]}

Troadec, D. ^{[6
]}

Rozenberg, M. ^{[2
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes, France

[2] Univ Paris 11, CNRS, Lab Phys Solides, UMR 8502, F-91405 Orsay, France

[3] Univ Nacl San Martin, ECyT, RA-1650 San Martin, Argentina

[4] Univ Paris 06, Inst Nanosci Paris, CNRS, UMR 7588, F-75005 Paris, France

[5] Univ F Rabelais, GREMAN, CNRS, UFR Sci,UMR 7347, F-37200 Tours, France

[6] CNRS, Inst Elect Microelect & Nanotechnol IEMN, UMR 8520, F-59652 Villeneuve Dascq, France

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2013年 / 222卷 / 05期

关键词：

POSSIBLE SUPERCONDUCTIVITY; BANDGAP SEMICONDUCTORS; MEMORIES; TRANSITION; MECHANISMS; GATA4SE8; WIDE;

D O I：

10.1140/epjst/e2013-01905-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The Mott insulator compounds AM(4)Q(8) exhibit a new type of volatile and non volatile resistive switchings that are of interest for RRAM application. We found that above a threshold electric field E (TH) of the order of a few kV/cm these compounds undergo a volatile resistive switching based on an avalanche process. For electric field much higher than the threshold avalanche breakdown field, the resistive switching turns non volatile. Our EDXS and STEM analyses show that the non volatile resistive switching originating from the avalanche breakdown can neither be ascribed to local chemical modifications nor to a local phase change with symmetry breaking at a resolution better than a few nanometer. This is in strong contrast with non volatile resistive switching reported so far that are all based on chemical or structural changes. Conversely, our results suggest that the avalanche breakdown induce the collapse of the Mott insulating state at the local scale and the formation of a granular conductive filament formed by compressed metallic domains and expanded "superinsulating" domains.

引用

页码：1047 / 1056

页数：10

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