Pseudomorphic InGaAs/In(Ga)P bidimensional electron gas grown by chemical beam epitaxy

被引：4

作者：

Carlin, JF

Rudra, A

Ilegems, M

机构：

[1] Inst. de Micro-et Optoelectronique, Ecl. Polytech. Federale de Lausanne

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 164卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)01062-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth temperatures between 450 and 520 degrees C and V/III ratios of 2-8 were explored to optimize the crystalline quality and the transport properties of compressively strained InxGa1-xAs/InP heterostructures (0.53 < x < 1). 77 K Hall mobilities as high as 118000 cm(2) V-1 s(-1) with n(s) = 1.4 x 10(12) cm(-2) were measured on structures incorporating an In0.8Ga0.2As channel grown with optimized conditions.

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页码：470 / 475

页数：6

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