EFFECT OF HIGH-STRAIN ON NOISE CHARACTERISTICS IN INALAS/INGAAS PSEUDOMORPHIC HEMT

被引：3

作者：

CHOUGH, KB

HONG, WP

CANEAU, C

SONG, JI

机构：

[1] Bellcore, Red Bank, MJ 07701

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 21期

关键词：

TRANSISTORS; SEMICONDUCTOR MATERIALS AND DEVICES;

D O I：

10.1049/el:19921292

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the RF noise characteristics of an InGaAs HEMT having a highly strained channel. The characteristics were compared with those of a device having a lattice-matched channel. The indium mole fraction of the strained channel was 80%. While the DC and RF performances were significantly improved with the strained channel, the RF noise characteristics showed that the device with the strained channel had higher noise and a different dependence on bias current.

引用

收藏

页码：2016 / 2018

页数：3

相关论文

共 10 条

[1] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].

CHAO, PC ;

TESSMER, AJ ;

DUH, KHG ;

HO, P ;

KAO, MY ;

SMITH, PM ;

BALLINGALL, JM ;

LIU, SMJ ;

JABRA, AA .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :59-62

[2] COMPARISON OF DEVICE PERFORMANCE OF HIGHLY STRAINED GA1-XINXAS/AL0.48IN0.52AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.90) MODFETS [J].

CHOUGH, KB ;

CHANG, TY ;

FEUER, MD ;

LALEVIC, B .

ELECTRONICS LETTERS, 1992, 28 (03) :329-330

[3] A NEW RELATIONSHIP BETWEEN THE FUKUI COEFFICIENT AND OPTIMAL CURRENT VALUE FOR LOW-NOISE OPERATION OF FIELD-EFFECT TRANSISTORS [J].

DELAGEBEAUDEUF, D ;

CHEVRIER, J ;

LAVIRON, M ;

DELESCLUSE, P .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :444-445

[4]

Duh K. H. G., 1991, IEEE Microwave and Guided Wave Letters, V1, P114, DOI 10.1109/75.89081

[5] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].

FUKUI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037

[6] LOW-FIELD AND HIGH-FIELD TRANSPORT-PROPERTIES OF PSEUDOMORPHIC INXGA1-XAS IN0.52AL0.48AS (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.65) MODULATION-DOPED HETEROSTRUCTURES [J].

HONG, WP ;

NG, GI ;

BHATTACHARYA, PK ;

PAVLIDIS, D ;

WILLING, S ;

DAS, B .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) :1945-1949

[7] VERY HIGH POWER-ADDED EFFICIENCY AND LOW-NOISE 0.15-MICRO-M GATE-LENGTH PSEUDOMORPHIC HEMTS [J].

KAO, MY ;

SMITH, PM ;

HO, P ;

CHAO, PC ;

DUH, KHG ;

JABRA, AA ;

BALLINGALL, JM .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) :580-582

[8] DETERMINATION OF DEVICE NOISE PARAMETERS [J].

LANE, RQ .

PROCEEDINGS OF THE IEEE, 1969, 57 (08) :1461-&

[9]

Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784

[10] 94-GHZ 0.1-MU-M T-GATE LOW-NOISE PSEUDOMORPHIC INGAAS HEMTS [J].

TAN, KL ;

DIA, RM ;

STREIT, DC ;

LIN, TY ;

TRINH, TQ ;

HAN, AC ;

LIU, PH ;

CHOW, PMD ;

YEN, HC .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) :585-587