Suppression of temperature instability in InGaZnO thin-film transistors by in situ nitrogen doping

被引：35

作者：

Raja, Jayapal ^{[1
]}

Jang, Kyungsoo ^{[1
]}

Balaji, Nagarajan ^{[2
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Sch Elect Elect Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

LEAKAGE CURRENT; PASSIVATION; STABILITY;

D O I：

10.1088/0268-1242/28/11/115010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effect of nitrogen doping on the behavior of hysteresis curve and its suppression of temperature instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs). The in situ nitrogen doping reduced the temperature induced abnormal sub threshold leakage current and traps generation. Large falling-rate (F-R) similar to 0.26 eV V-1, low activation energy (E-a) similar to 0.617 eV and a small hysteresis compared to the pure a-IGZO TFTs, shows the best immunity to thermal instability. This is mainly attributed to the reduction of interface trap density and oxygen vacancies due to the passivation of defects and/dangling bonds.

引用

页数：6

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