Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability

被引：28

作者：

Fuh, Chur-Shyang ^{[1
,2
]}

Liu, Po-Tsun ^{[3
,4
]}

Chou, Yi-Teh ^{[3
,5
]}

Teng, Li-Feng ^{[3
,5
]}

Sze, S. M. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[4] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[5] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2013年 / 2卷 / 01期

关键词：

OXIDATION; SURFACE; BIAS;

D O I：

10.1149/2.012301jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The role of oxygen in amorphous InGaZnO thin film transistor (a-IGZO TFT) is studied for the device ambient stability. The threshold voltage (Vth) value of 350 degrees C annealed a-IGZO TFT decreased apparently with the staying duration, and the average value shifted from 10.2 V to 5.8 V after a 9-day staying at the atmosphere. After raising the annealing temperature to 450 degrees C, the electrical stability issue was improved significantly with superior electrical parameters, including low threshold voltage (V-th), low subthreshold swing, high carrier mobility and a small V-th variation of +/- 0.5 V. It can be attributed to the enhancement of bonding energy of oxygen in the thermally-annealed a-IGZO film with the increase of thermal annealing temperatures. Besides, the stronger oxygen bonding could also suppress the absorption/desorption and UV-induced migration at the back surface, causing better electrical reliability and immunity against UV radiation, respectively. All these results showed the ambient stability is greatly related to the oxygen in a-IGZO film, and the desired electrical characteristic can be achieved via the optimization of thermal annealing process. (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：Q1 / Q5

页数：5

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