Light-induced instability of an InGaZnO thin film transistor with and without SiOx passivation layer formed by plasma-enhanced-chemical-vapor-deposition

被引：93

作者：

Chen, Te-Chih ^{[1
,2
]}

Chang, Ting-Chang ^{[1
,2
]}

Hsieh, Tien-Yu ^{[1
,2
]}

Tsai, Chih-Tsung ^{[1
,2
]}

Chen, Shih-Ching ^{[1
,2
]}

Lin, Chia-Sheng ^{[3
]}

Hung, Ming-Chin ^{[4
]}

Tu, Chun-Hao ^{[4
]}

Chang, Jiun-Jye ^{[4
]}

Chen, Po-Lun ^{[4
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan

[4] AU Optron, Adv Display Technol Res Ctr, Hsinchu 30078, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

关键词：

D O I：

10.1063/1.3514251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper investigates the illuminated behaviors of InGaZnO thin film transistors with and without a SiOx passivation. For the passivated device, more interface states were generated during SiOx passivation layer deposition by plasma-enhanced-chemical-vapor-deposition. The enhanced trap-assisted photoexcited hole generation induces source side barrier lowering and causes an apparent subthreshold stretch-out phenomenon. However, for the unpassivated device, the fact that the threshold voltage shift in ambient oxygen is lower than in vacuum under light illumination suggests oxygen desorption and readsorption occurs simultaneously, which is consistent with the accelerated recovery rate in oxygen ambiance. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3514251]

引用

页数：3

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