Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells

被引：48

作者：

Aumer, ME ^{[1
]}

LeBoeuf, SF ^{[1
]}

Moody, BF ^{[1
]}

Bedair, SM ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 23期

关键词：

D O I：

10.1063/1.1418453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effects of the piezoelectric field and well width on the transition energy and intensity for InGaN quantum well structures with GaN or AlInGaN quaternary barriers. It was found that the emission energy of compressively strained GaN/In0.08Ga0.92N quantum wells exhibits a strong well width dependence not accounted for by quantum confinement subband energy shifting alone. However, for unstrained quantum well layers with quaternary barriers, no emission energy dependence on width was observed due to the elimination of the piezoelectric field, which was measured to be at least 0.6 MV/cm for the strained quantum wells. Furthermore, the unstrained quantum wells demonstrated a higher intensity than their strained counterparts for all quantum well widths investigated. The current data will help clarify the origin of emission in InGaN quantum wells. (C) 2001 American Institute of Physics.

引用

页码：3803 / 3805

页数：3

共 14 条

[1] High optical quality AlInGaN by metalorganic chemical vapor deposition [J].

Aumer, ME ;

LeBoeuf, SF ;

McIntosh, FG ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1999, 75 (21) :3315-3317

[2] Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures [J].

Aumer, ME ;

LeBoeuf, SF ;

Bedair, SM ;

Smith, M ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2000, 77 (06) :821-823

[3]

CHUANG SL, 1995, PHYSICS OPTOELECTRON

[4] Effects of macroscopic polarization in III-V nitride multiple quantum wells [J].

Fiorentini, V ;

Bernardini, F ;

Della Sala, F ;

Di Carlo, A ;

Lugli, P .

PHYSICAL REVIEW B, 1999, 60 (12) :8849-8858

[5]

Foutz BE, 1999, PHYS STATUS SOLIDI B, V216, P415, DOI 10.1002/(SICI)1521-3951(199911)216:1<415::AID-PSSB415>3.0.CO

[6]

2-W

[7] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[8] High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L309-L312

[9] Determination of the critical layer thickness in the InGaN/GaN heterostructures [J].

Parker, CA ;

Roberts, JC ;

Bedair, SM ;

Reed, MJ ;

Liu, SX ;

El-Masry, NA .

APPLIED PHYSICS LETTERS, 1999, 75 (18) :2776-2778

[10] Effect of hydrogen on the indium incorporation in InGaN epitaxial films [J].

Piner, EL ;

Behbehani, MK ;

ElMasry, NA ;

McIntosh, FG ;

Roberts, JC ;

Boutros, KS ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 1997, 70 (04) :461-463

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