Formation of ohmic contacts to p-type ZnO

被引：11

作者：

Kurimoto, M

Ashrafi, ABMA

Ebihara, M

Uesugi, K

Kumano, H

Suemune, I

机构：

[1] Hokkaido Univ, Lab Optoelect, Nanotechnol Res Ctr, Res Inst Elect Sci,Kita Ku, Sapporo, Hokkaido 0010021, Japan

[2] Inst Phys & Chem Res, Lab Photophys, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 03期

关键词：

D O I：

10.1002/pssb.200304286

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Formation of ohmic contacts to p-type zinc oxide (ZnO) was studied. The p-type ZnO samples were grown by metalorgarric molecular-beam epitaxy with diethylzinc, deionized water vapor and monomethythidrazine and were annealed under oxygen gas ambient at 650 degreesC or 700 degreesC for 20 min to activate doped nitrogen acceptors. Although the current-voltage characteristics measured through gold p-contacts were not perfectly ohmic, they showed perfectly ohmic properties after rapid thermal annealing (RTA) in the temperature range of 300 to 520 degreesC for 2 min. The ohmic contact resistivity was measured with the transmission-line measurement method and it was decreased to approximately 1/64 with increasing the RTA temperature. The minimum contact resistivity of 3.15 x 10(-3) Ohm cm(2) was observed with RTA at 520 degreesC for 2 min. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：635 / 639

页数：5

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