Film thickness dependence of the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system

被引：24

作者：

Liu, JF ^{[1
]}

Feng, JY ^{[1
]}

Zhu, J ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Key Lab Adv Mat, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 02期

关键词：

D O I：

10.1063/1.1434311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of film thickness on the NiSi-to-NiSi2 transition temperature in the Ni/Pt/Si(100) system has been studied. Three sets of Ni/Pt/Si(100) bilayered samples with the same Ni:Pt ratios but with different film thicknesses were annealed by rapid thermal annealing at 750-900 degreesC. Both the x-ray diffraction analysis and the sheet resistance measurement show that the thermal stability of Ni(Pt)Si films improves with a decrease in film thickness. This property of Ni(Pt)Si films reveals the good potential for its applications in ultrashallow junctions. The experimental results are explained in terms of classical nucleation theory. (C) 2002 American Institute of Physics.

引用

页码：270 / 272

页数：3

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