Transparent thin film transistors based on indium oxide semiconductor

被引：45

作者：

Lavareda, G. ^{[1
]}

de Carvalho, C. Nunes

Fortunato, E.

Ramos, A. R.

Alves, E.

Conde, O.

Amaral, A.

机构：

[1] Univ Nova Lisboa, Dep Ciencia Mat, FCT, P-2829516 Caparica, Portugal

[2] LMSCE, P-1049001 Lisbon, Portugal

[3] IST, Dept Fis, P-1049001 Lisbon, Portugal

[4] FCUL, ICEM, Dept Fis, P-1749016 Lisbon, Portugal

[5] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 23-25期

关键词：

thin film transistors;

D O I：

10.1016/j.jnoncrysol.2006.03.031

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium oxide films were deposited by radio-frequency plasma enhanced reactive thermal evaporation (rf-PERTE). The combined use of rf power and oxygen pressure allowed the control of the crystallite size in the film, changing the optical and electrical properties. The films obtained have electrical resistivity ranging from 13.7 to 1.7 x 10(7) Omega cm. Transparent TFTs made with those films as semiconducting and conducting layers, respectively, present threshold voltages near 2 V and on/off ratios of 10(4). (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2311 / 2314

页数：4

共 14 条

[1] Simulated annealing analysis of Rutherford backscattering data [J].

Barradas, NP ;

Jeynes, C ;

Webb, RP .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :291-293

[2] Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates-dependence on oxygen partial pressure [J].

de Carvalho, CN ;

Lavareda, G ;

Fortunato, E ;

Amaral, A .

THIN SOLID FILMS, 2003, 427 (1-2) :215-218

[3] High field-effect mobility zinc oxide thin film transistors produced at room temperature [J].

Fortunato, E ;

Pimentel, A ;

Pereira, L ;

Gonçalves, A ;

Lavareda, G ;

Aguas, H ;

Ferreira, I ;

Carvalho, CN ;

Martins, R .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :806-809

[4] The influence of preparation conditions on the electrical and optical properties of oxidized indium thin films [J].

Girtan, M ;

Rusu, GI ;

Rusu, GG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 76 (02) :156-160

[5] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[6] Frontier of transparent conductive oxide thin films [J].

Hosono, H ;

Ohta, H ;

Orita, M ;

Ueda, K ;

Hirano, M .

VACUUM, 2002, 66 (3-4) :419-425

[7] Enhancement of CO sensitivity of indium oxide-based semiconductor gas sensor through ultra-thin cobalt adsorption [J].

Lee, HJ ;

Song, JH ;

Yoon, YS ;

Kim, TS ;

Kim, KJ ;

Choi, WK .

SENSORS AND ACTUATORS B-CHEMICAL, 2001, 79 (2-3) :200-205

[8] Effects of annealing on the properties of indium-tin oxide films prepared by ion beam sputtering [J].

Lii, DF ;

Huang, JL ;

Jen, IJ ;

Lin, SS ;

Sajgalik, P .

SURFACE & COATINGS TECHNOLOGY, 2005, 192 (01) :106-111

[9] Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor [J].

Nomura, K ;

Ohta, H ;

Ueda, K ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

SCIENCE, 2003, 300 (5623) :1269-1272

[10] Use of ferroelectric gate insulator for thin film transistors with ITO channel [J].

Tokumitsu, E ;

Senoo, M ;

Miyasako, T .

MICROELECTRONIC ENGINEERING, 2005, 80 :305-308

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