Faceting evolution during self-assembling of InAs/InP quantum wires

被引：40

作者：

Gutiérrez, HR ^{[1
]}

Cotta, MA ^{[1
]}

de Carvalho, MMG ^{[1
]}

机构：

[1] UNICAMP, DFA, LPD, Inst Fis Gleb Wataghin, BR-13081970 Campinas, SP, Brazil

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 23期

关键词：

D O I：

10.1063/1.1424476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-assembling of InAs quantum wires on (001) InP substrates during chemical beam epitaxy has been studied. The samples were characterized by reflection high-energy electron diffraction (RHEED), atomic force microscopy, and high-resolution transmission electron microscopy (HRTEM). By monitoring the RHEED chevron structures along the [1 (1) over bar0] direction, we studied the facets formation during the initial states of InAs growth. The facets angles measured by HRTEM are in perfect agreement with the angles between chevron streaks. A time dependence of the chevron streaks angles is reported and correlated to the wire formation. These results can be interpreted using nonequilibrium models existing in literature. (C) 2001 American Institute of Physics.

引用

页码：3854 / 3856

页数：3

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