Capacitance technique for the determination of interface state density of metal-semiconductor contact

被引：47

作者：

Chattopadhyay, P

机构：

[1] Department of Electronic Science, Univ. Coll. of Sci. and Technology, Calcutta - 700 009

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 10期

关键词：

D O I：

10.1016/0038-1101(96)00058-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A capacitance technique to determine the interface state density of metal-semiconductor contact is developed which takes care of interfacial oxide layer and series resistance of the device. The technique is applied to Pt- and Co-nSi contacts, and the energy distributions of interface state density are determined. For both devices, the distribution is found to be initially flat, then increasing sharply with energy. Copyright (C) 1996 Published by Elsevier Science Ltd

引用

页码：1491 / 1493

页数：3

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