Strain-balanced Si SiGe short period superlattices: Disruption of the surface crosshatch

被引：21

作者：

Hartmann, JM ^{[1
]}

Gallas, B ^{[1
]}

Zhang, J ^{[1
]}

Harris, JJ ^{[1
]}

Joyce, BA ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 02期

关键词：

D O I：

10.1063/1.370813

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the [100] directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the [110] directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL. (C) 1999 American Institute of Physics. [S0021-8979(99)04314-5].

引用

页码：845 / 849

页数：5

共 22 条

[1] X-RAY-DIFFRACTION EFFECTS IN GA AND AL ARSENIDE STRUCTURES MBE-GROWN ON SLIGHTLY MISORIENTED GAAS (001) SUBSTRATES [J].