High-rate reactive deposition of indium oxide films on unheated substrate using ozone gas

被引：13

作者：

Alam, AHMZ ^{[1
]}

Saha, PK

Hata, T

Sasaki, K

机构：

[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh

[2] Kanazawa Univ, Dept Elect & Comp Engn, Kanazawa, Ishikawa 920, Japan

来源：

THIN SOLID FILMS | 1999年 / 352卷 / 1-2期

关键词：

metallic mode; reactive sputtering;

D O I：

10.1016/S0040-6090(99)00347-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effectiveness of ozone incorporation in reactive gas of oxygen for producing indium oxide films by DC reactive magnetron sputtering employing a metal target has been investigated. It was found that 4% volume concentration of O-3 in addition to oxygen greatly enhanced the reactivity of the sputtered particles on the substrate of growing surface without substrate heating. The deposition rate of stoichiometric oxide film is found much greater in ozone added environment than that of growing in only oxygen environment. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：133 / 137

页数：5

共 15 条

[1]

ALAM AHMZ, 1996, THIN SOLID FILMS, V282, P209

[2] REACTIVE DEPOSITION OF LOW-LOSS AL2O3 OPTICAL-WAVEGUIDES BY MODIFIED DC PLANAR MAGNETRON SPUTTERING [J].