Low density InAs quantum dots with control in energy emission and top surface location

被引：29

作者：

Alonso-Gonzalez, P. ^{[1
]}

Fuster, D. ^{[1
]}

Gonzalez, L. ^{[1
]}

Martin-Sanchez, J. ^{[1
]}

Gonzalez, Y. ^{[1
]}

机构：

[1] CSIC, IMM CNM, Madrid 28760, Spain

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 18期

关键词：

III-V semiconductors; indium compounds; liquid phase epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; wide band gap semiconductors;

D O I：

10.1063/1.3021070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we extend the droplet epitaxy growth technique to the fabrication of low density InAs quantum dots (QDs) on GaAs (001) substrates with control in size, energy emission, and top surface location. In particular, depending on the amount of InAs material deposited, it has been possible to tune the QD energy emission over a range of 1.12-1.40 eV while keeping constant the nanostructures density at 2x10(8) cm(-2). Moreover, the capping growth process of these QD shows mounding features that permit their spatial identification once embedded by a GaAs capping layer.

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