Transient heating study of microhotplates by using a high-speed thermal imaging system

被引:7
作者
Afridi, M [1 ]
Berning, D [1 ]
Hefner, A [1 ]
Suehle, J [1 ]
Zaghloul, M [1 ]
Kelley, E [1 ]
Parrilla, Z [1 ]
Ellenwood, C [1 ]
机构
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
来源
EIGHTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2002 | 2002年
关键词
D O I
10.1109/STHERM.2002.991352
中图分类号
O414.1 [热力学];
学科分类号
摘要
A high-speed thermal imaging system is used to investigate the dynamic thermal behavior of MEMS (MicroElectroMechanical Systems) based microhotplate devices. These devices are suspended microstructures fabricated in CMOS technology and are used in various sensor applications. Measurements reveal delayed surface heating of the microhotplate and temperature redistribution during both the heating and cooling phases. Reflected infrared (IR) radiation from the hidden backside of the heater is used with a normalization technique to determine peak heater temperature. The measurements are shown to be useful in optimizing the design of microhotplate structures. It is found that the use of a heat-spreading layer improves the local temperature uniformity between the heater strips. It is also found that the use of the thinner layers of the 1.5 mum CMOS technology improve the global temperature uniformity over the top surface of the microhotplate.
引用
收藏
页码:92 / 98
页数:7
相关论文
共 10 条
[1]  
AFRIDI M, 2001, EUR C CIRC THEOR DES
[2]   FAST TEMPERATURE-PROGRAMMED SENSING FOR MICRO-HOTPLATE GAS SENSORS [J].
CAVICCHI, RE ;
SUEHLE, JS ;
KREIDER, KG ;
GAITAN, M ;
CHAPARALA, P .
IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) :286-288
[3]   AN INTEGRATED LOW-POWER THIN-FILM CO GAS SENSOR ON SILICON [J].
DEMARNE, V ;
GRISEL, A .
SENSORS AND ACTUATORS, 1988, 13 (04) :301-313
[4]   A high-speed thermal imaging system for semiconductor device analysis [J].
Hefner, A ;
Berning, D ;
Blackburn, D ;
Chapuy, C ;
Bouché, S .
SEVENTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, PROCEEDINGS 2001, 2001, :43-49
[5]   THERMOELECTRIC AC POWER SENSOR BY CMOS TECHNOLOGY [J].
JAEGGI, D ;
BALTES, H ;
MOSER, D .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (07) :366-368
[6]  
MOSER D, 1991, P TRANSDUCERS 91 SAN, P547
[7]   MICROMACHINED THERMAL-RADIATION EMITTER FROM A COMMERCIAL CMOS PROCESS [J].
PARAMESWARAN, M ;
ROBINSON, AM ;
BLACKBURN, DL ;
GAITAN, M ;
GEIST, J .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (02) :57-59
[8]   A NEW APPROACH FOR THE FABRICATION OF MICROMECHANICAL STRUCTURES [J].
PARAMESWARAN, M ;
BALTES, HP ;
RISTIC, L ;
DHADED, AC ;
ROBINSON, AM .
SENSORS AND ACTUATORS, 1989, 19 (03) :289-307
[9]  
PARAMESWARAN M, 1990, SENSOR MATER, V2, P17
[10]   TIN OXIDE GAS SENSOR FABRICATED USING CMOS MICRO-HOTPLATES AND INSITU PROCESSING [J].
SUEHLE, JS ;
CAVICCHI, RE ;
GAITAN, M ;
SEMANCIK, S .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (03) :118-120