JVD silicon nitride and titanium oxide as advanced gate dielectrics

被引：2

作者：

Ma, TP ^{[1
]}

机构：

[1] Yale Univ, Ctr Microelect Struct & Mat, New Haven, CT 06520 USA

来源：

ULTRATHIN SIO2 AND HIGH-K MATERIALS FOR ULSI GATE DIELECTRICS | 1999年 / 567卷

关键词：

D O I：

10.1557/PROC-567-73

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SIN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented.

引用

页码：73 / 81

页数：9

共 14 条

[1]

ALLOERT K, 1985, J ELECTROCHEM SOC, V132, P1763

[2] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].

DEAL, BE ;

MACKENNA, EL ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&

[3] BORDER TRAPS IN MOS DEVICES [J].

FLEETWOOD, DM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (02) :269-271

[4] ELECTRICAL-PROPERTIES OF SILICON-NITRIDE FILMS PLASMA-DEPOSITED FROM SIF4, N2, AND H2 SOURCE GASES [J].

FUJITA, S ;

OHISHI, T ;

TOYOSHIMA, H ;

SASAKI, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :426-431

[5] 2-BAND CONDUCTION OF AMORPHOUS SILICON-NITRIDE [J].

GINOVKER, AS ;

GRITSENKO, VA ;

SINITSA, SP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :489-495

[6] Tunneling leakage current in oxynitride: Dependence on oxygen/nitrogen content [J].

Guo, X ;

Ma, TP .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (06) :207-209

[7] High quality ultra-thin TiO2/Si3N4 gate dielectric for giga scale MOS technology [J].

Guo, X ;

Ma, TP ;

Tamagawa, T ;

Halpern, BL .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :377-380

[8] HYDROGEN-RELATED MEMORY TRAPS IN THIN SILICON-NITRIDE FILMS [J].

KAPOOR, VJ ;

BAILEY, RS ;

STEIN, HJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :600-607

[9] Transconductance in nitride-gate or oxynitride-gate transistors [J].

Khare, M ;

Wang, XW ;

Ma, TP .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (01) :57-59

[10]

KHARE M, 1998 S VLSI TECHN, P218

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