Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga, Mn)As

被引：151

作者：

Oiwa, A

Mitsumori, Y

Moriya, R

Slupinski, T

Munekata, H

机构：

[1] Kanagawa Acad Sci & Technol, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Imaging Sci & Engn Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.88.137202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the new type of photoinduced magnetization in ferromagnetic (Ga,Mn) thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being 15% of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the p-d exchange interaction.

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页数：4

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