Effects of process parameters on titanium dioxide thin film deposited using ECR MOCVD

The electron cyclotron resonance plasma-assisted metal organic chemical vapor deposition (ECR MOCVD) method was used to prepare TiO2 thin films. A TiO2 thin film consisting of an anatase phase was fabricated on Si and SiO2 (2000 Angstrom)/Si substrates at relatively low temperature. Phase, surface morphology and deposition rate were investigated using X-ray diffraction, scanning electron microscopy and ellipsometry. The effects of process parameters such as deposition temperature (25-550 degrees C), plasma power (0-400 W), the spacing between gas ring and substrate (110-170 mm) and working pressure (1.5-5 mTorr) on TiO2 thin film formation in an ECR MOCVD system have been investigated.