Simulation of GaAs growth and surface recovery with respect to gallium and arsenic surface kinetics

A Monte Carlo simulation of GaAs homoepitaxy and subsequent surface recovery is performed using a solid-on-solid configuration. It is assumed that both Ga atoms and GaAs molecules are mobile during growth and contribute to the surface-diffusion flux. When growth is terminated by stopping the Ga supply, all Ga adatoms are found to react very quickly to form GaAs molecules. Thus, during recovery only diffusion of less mobile GaAs molecules is of relevance. The simulation is parametrized by a detailed comparison with reflection high electron energy diffraction measurements. In particular, the recovery phase after growth stops, the oscillation damping, and the As-4 sticking coefficient an analyzed. Quantitative agreement with all measurements is achieved and a simulation of the flux-ratio-dependent behavior is possible, as is demonstrated for the As-4 sticking coefficient.