Scanning tunneling microscopy of the GaN(0001) surface

被引:11
作者
Packard, WE
Dow, JD
Nicolaides, R
Doverspike, K
Kaplan, R
机构
[1] INST POSTDOCTORAL STUDIES,ST JOHN,VI 00830
[2] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1006/spmi.1996.0060
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The wurtzite GaN(0001) surface is imaged by scanning tunneling microscopy. Terraces are observed with line-defect structures on them: primarily regularly spaced striations perpendicular to step edges. A model of these striations as ordered N-vacancies is presented. (C) 1996 Academic Press Limited
引用
收藏
页码:145 / 148
页数:4
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