Enhancing Sensitivity of a Single ZnO Micro-/Nanowire Photodetector by Piezo-phototronic Effect

被引：477

作者：

Yang, Qing ^{[1
,2
]}

Guo, Xin ^{[2
]}

Wang, Wenhui ^{[1
]}

Zhang, Yan ^{[1
]}

Xu, Sheng ^{[1
]}

Lien, Der Hsien ^{[1
]}

Wang, Zhong Lin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Zhejiang Univ, Dept Opt Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

ACS NANO | 2010年 / 4卷 / 10期

关键词：

ZnO nanowire; Schottky contact; piezopotential; photodetector; piezo-phototronic effect; FIELD-EFFECT TRANSISTOR; NANOWIRE; ENHANCEMENT;

D O I：

10.1021/nn1022878

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate the piezoelectric effect on the responsivity of a metal-semiconductor-metal ZnO micro-/nanowire photodetector. The responsivity of the photodetector is respectively enhanced by 530%, 190%, 9%, and 15% upon 4.1 pW, 120.0 pW, 4.1 nW, and 180.4 nW UV light illumination onto the wire by introducing a -0.36% compressive strain in the wire, which effectively tuned the Schottky barrier height at the contact by the produced local piezopotential. After a systematic study on the Schottky barrier height change with tuning of the strain and the excitation light intensity, an in-depth understanding is provided about the physical mechanism of the coupling of piezoelectric, optical, and semiconducting properties. Our results show that the piezo-phototronic effect can enhance the detection sensitivity more than 5-fold for pW levels of light detection.

引用

页码：6285 / 6291

页数：7

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