Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer

被引：14

作者：

Kusakabe, K ^{[1
]}

Kishino, K ^{[1
]}

Kikuchi, A ^{[1
]}

Yamada, T ^{[1
]}

Sugihara, D ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 230卷 / 3-4期

基金：

日本学术振兴会;

关键词：

migration enhanced epitaxy; molecular beam epitaxy; nitrides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)01248-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality GaN layer was obtained by insertion of high temperature grown AIN multiple intermediate layers with migration enhanced epitaxy method by the RF-plasma assisted molecular beam epitaxy on (0001) sapphire substrates. The propagating behaviors of dislocations were studied, using a transmission electron microscope. The results show that the edge dislocations were filtered at the AlN/GaN interfaces. The bending propagation of threading dislocations in GaN above AIN interlayers was confirmed. Thereby, further reduction of dislocations was achieved. Dislocation density being reduced, the drastic increase of electron mobility to 668 cm(2)/V s was obtained at the carrier density of 9.5 x 10(16)cm(-3) in Si doped GaN layer. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：387 / 391

页数：5

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