X-ray reciprocal space mapping of strain relaxation in GaAs1-xNx on GaAs [100] by molecular-beam epitaxy

被引：10

作者：

Cheah, WK ^{[1
]}

Fan, WJ ^{[1
]}

Yoon, SF ^{[1
]}

Wang, SZ ^{[1
]}

Loke, WK ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 06期

关键词：

D O I：

10.1063/1.1600844

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of strain on GaAs1-xNx grown on GaAs is observed using two-dimensional [115] high-resolution x-ray diffraction rocking curves. The instance when the epilayer changes from a highly strained to a relaxed state, is captured and a change in peak profile is observed. The increase of growth rate is found to have an effect of maintaining the crystal quality and surface reconstruction. Interstitial N complex lowers the tensile strain due to its compressive nature, thereby increasing the critical thickness at high N%. We demonstrated that GaAs0.952N0.048 can be coherently grown to 100 nm on GaAs, exceeding the critical thickness by 4.7 times after an optimization of III-V-N growth by means of higher rf power compensation under an increased growth rate. (C) 2003 American Institute of Physics.

引用

页码：3828 / 3833

页数：6

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