Conduction band offset of HfO2 on GaAs

被引：45

作者：

Seguini, G.

Perego, M.

Spiga, S.

Fanciulli, M.

Dimoulas, A.

机构：

[1] CNR INFM, MDM Natl Lab, I-20041 Milan, Italy

[2] Demokritos Natl Ctr Sci Res, Inst Mat Sci, MBE Lab, GR-15310 Athens, Greece

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

关键词：

D O I：

10.1063/1.2805811

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A detailed analysis of the band alignment between molecular beam deposited amorphous HfO2 and GaAs is reported. The conduction band offset, measured by internal photoemission (IPE), is 1.9 +/- 0.2 eV. The valence band offset (VBO) is probed by x-ray photoelectron spectroscopy (XPS). The accurate determination of the VBO requires a careful evaluation of differential charging phenomena and consequently a proper correction of the energy scale. The measured VBO value is 2.1 +/- 0.1 eV. Since the HfO2 gap is 5.6 eV, as detected by photoconductivity analysis, the results obtained by IPE and XPS are in excellent agreement.

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页数：3

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