Process controlled microstructural and binding properties of hard physical vapor deposition films

The influence of the ion-to-atom flux ratio and the ion energy on the texture development and the grain size is exemplified for well controlled ion beam assisted and plasma beam deposition of TiN films. The dependence of the atomic binding configuration in hard carbon and nitride films on the energy input during film growth is also addressed with special emphasis on a possible synthesis of the hypothetical beta-C3N4 phase. (C) 1998 American Vacuum Society.