A novel structural amorphous fluoropolymer film with an ultra-low dielectric constant

被引：29

作者：

Ding, SJ

Wang, PF

Zhang, DW ^{[1
]}

Wang, JT

Lee, WW

机构：

[1] Fudan Univ, Dept Elect Engn, Shanghai 200433, Peoples R China

[2] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

MATERIALS LETTERS | 2001年 / 49卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

amorphous fluoropolymer; dielectric constant; film; novel structure; spin coating; pore; phase separation;

D O I：

10.1016/S0167-577X(00)00360-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous fluoropolymer (AF) thin Nm (0.9-1 mum), which has no-pinhole and uniform surface and numerous pores in the matrix, has been prepared from a solution of Teflon AF 1600 by a spin-coating method. Thermal annealing at 400 degreesC for 30 min does not cause obvious deterioration of the film surface morphology. The mechanism for the formation of the film with a novel structure is discussed. By capacitance-voltage (C-V) and current-voltage (I-V) measurements, the electricity properties of the AF film are defined. The substitution of SiO2 (k = 4.0) with the AF film (k = 1.57) will decrease the resistance-capacitance (RC) delay by about 61%. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：154 / 159

页数：6

共 21 条

[1] DEPOSITION OF AMORPHOUS FLUOROPOLYMERS THIN-FILMS BY LASER ABLATION [J].