Nonequilibrium electron transport in HBTs

被引：48

作者：

Ishibashi, T ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Photon Labs, Kanagawa 2430198, Japan

[2] NTT Elect, Tokyo 1940004, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 11期

关键词：

III-V material; bipolar transistor; GaAs; heterostructure; heterostructure bipolar transistor (HBT); InP;

D O I：

10.1109/16.960386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nonequilibrium electron transport in heterojunction bipolar transistors (HBTs) becomes clearly observable as their vertical dimensions are reduced. This is the reason for the superior tradeoff relationships between the device parameters and the resultant high-speed performance of HBTs fabricated with III-V semiconductor materials. This paper reviews the hot carrier effect in the base and the velocity overshoot effect in the collector and discusses the roles these effects play in reducing carrier traveling times and improving device performance.

引用

页码：2595 / 2605

页数：11

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