ELECTROLUMINESCENCE MEASUREMENT OF BALLISTIC ELECTRON-DISTRIBUTION IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES WITH BASE WIDTH MODULATION

被引：5

作者：

FUKAI, YK

FURUTA, T

ISHIBASHI, T

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 09期

关键词：

A; HETEROJUNCTIONS; SEMICONDUCTORS; D; ELECTRONIC TRANSPORT; ELECTRON-PHONON INTERACTIONS;

D O I：

10.1016/0038-1098(94)90773-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electroluminescence from the base region of Npn-AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are analyzed to investigate the behavior of electrically injected ballistic electrons in heterostructure. The low temperature luminescence reveals ballistic electron spectra, subsequent optical-phonon emissions and quasi-equilibrium hot electron spectra, which are the first observations in HBT structures. Modulation of the neutral base width by varying the base-collector voltage enables the evaluation of the spatial electron distribution. The ballistic mean free path is determined to be 130 +/- 20 nm at 18 K for an acceptor concentration of 2.5 x 10(17) cm(-3).

引用

页码：785 / 789

页数：5

共 10 条

[1]

BEBB HB, 1977, SEMICONDUCT SEMIMET, V8, pCH4

[2]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[3] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS [J].