BALLISTIC ELECTRON LUMINESCENCE SPECTROSCOPY

被引：7

作者：

LYON, SA

机构：

[1] Dept. of Electr. Eng., Princeton Univ., NJ

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The new technique of ballistic electron luminescence spectroscopy (BELS) is discussed, and applied in several situations. We describe the use of BELS to determine the conduction band offset in AlxGa1-xAs/GaAs heterostructures and the ballistic range of electrons in undoped GaAs. The range for the emission of longitudinal optical (LO) phonons is found to be approximately 1000 angstrom for electrons with an initial kinetic energy of about 250 meV.

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页码：B21 / B25

页数：5

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