Bulk GaN and AlGaN/GaN heterostructure drift velocity measurements and comparison to theoretical models

被引：72

作者：

Barker, JM ^{[1
]}

Ferry, DK

Koleske, DD

Shul, RJ

机构：

[1] Arizona State Univ, Dept Elect Engn, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 06期

关键词：

D O I：

10.1063/1.1854724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room-temperature velocity-field characteristics for n-type gallium nitride and AlGaN/GaN heterostructures, grown epitaxially on sapphire, were determined experimentally. A pulsed voltage input and four-point measurements were used on special geometry samples to determine the electron drift velocity as a function of applied electric field in the basal plane. These measurements show apparent saturation velocities near 2.5x10(7) cm/s at 180 kV/cm for the n-type gallium nitride and 3.1x10(7) cm/s at 140 kV/cm for the AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are close to previously published simulations based upon Monte Carlo techniques. (C) 2005 American Institute of Physics.

引用

页数：5

共 39 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] Electron drift velocity in AlGaN/GaN channel at high electric fields [J].

Ardaravicius, L ;

Matulionis, A ;

Liberis, J ;

Kiprijanovic, O ;

Ramonas, M ;

Eastman, LF ;

Shealy, JR ;

Vertiatchikh, A .

APPLIED PHYSICS LETTERS, 2003, 83 (19) :4038-4040

[3] High field transport in GaN/AlGaN heterostructures [J].

Barker, JM ;

Ferry, DK ;

Goodnick, SM ;

Koleske, DD ;

Allerman, A ;

Shul, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :2045-2050

[4] High-field transport studies of GaN [J].

Barker, JM ;

Akis, R ;

Ferry, DK ;

Goodnick, SM ;

Thornton, TJ ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) :39-41

[5] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[6] Electron momentum and energy relaxation rates in GaN and AlN in the high-field transport regime [J].

Bulutay, C ;

Ridley, BK ;

Zakhleniuk, NA .

PHYSICAL REVIEW B, 2003, 68 (11)

[7] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].

DAS, P ;

FERRY, DK .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855

[8]

Ferry D. K., 2000, SEMICONDUCTOR TRANSP

[9] ENERGY-DIFFUSION EQUATION IN HOT-ELECTRON PROBLEMS - DISTURBANCE OF POLAR-OPTICAL-PHONON DISTRIBUTION [J].

FERRY, DK .

PHYSICAL REVIEW B, 1973, 8 (04) :1544-1555

[10] HIGH-FIELD TRANSPORT IN WIDE-BAND-GAP SEMICONDUCTORS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1975, 12 (06) :2361-2369

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