Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type doping

被引：61

作者：

Heydrich, S. ^{[1
]}

Hirmer, M. ^{[1
]}

Preis, C. ^{[1
]}

Korn, T. ^{[1
]}

Eroms, J. ^{[1
]}

Weiss, D. ^{[1
]}

Schueller, C. ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 04期

关键词：

doping; electron beam lithography; graphene; phonons; Raman spectra; sputter etching;

D O I：

10.1063/1.3474613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths, and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band phonon mode, accompanied by a line narrowing, while the 2D two-phonon mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type doping of the nanostructured graphene. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3474613]

引用

页数：3

共 15 条

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