Intraband absorption in silicon nanocrystals: The combined effect of shape and crystal orientation

被引：7

作者：

de Sousa, JS

Leburton, JP

Freire, VN

da Silva, EF

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[3] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

[4] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 03期

关键词：

D O I：

10.1063/1.2000336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate intraband transitions in Si/SiO2 quantum dots (QD's) by using a tridimensional quantum mechanical model that takes into account the six-valley structure of silicon. The interplay between QD orientation and shape strongly affects the infrared absorption spectra of Si QD's. In particular, we show the orientation of the Si valleys dramatically changes the optical properties of Si QD's. (c) 2005 American Institute of Physics.

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页数：3

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