Field emission from carbon and silicon films with pillar microstructure

被引:32
作者
Colgan, MJ [1 ]
Brett, MJ [1 ]
机构
[1] Univ Alberta, Dept Elect & Comp Engn, Edmonton, AB T6G 2G7, Canada
关键词
field emission; deposition process; silicon; carbon;
D O I
10.1016/S0040-6090(01)00892-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electron field emission was measured from carbon and silicon thin films comprised of a porous, pillar microstructure fabricated by the glancing angle deposition technique. This single step glancing angle deposition technique leads to a high areal density of pillars with nanometer-scale diameters. A comparison of emission has been made against normal dense films of the same material. It has been observed that emission from the pillar films occurs at a much lower threshold voltage than emission from the normally deposited film. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
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