Electromigration testing of integrated circuit interconnections

被引：32

作者：

Fantini, F

Lloyd, JR

De Munari, I

Scorzoni, A

机构：

[1] Univ Modena, Dipartimento Sci Ingn, I-41100 Modena, Italy

[2] Lloyd Technol Associates Inc, Stow, MA 01775 USA

[3] Univ Parma, Dipartimento Ingn Informaz, I-43100 Parma, Italy

[4] CNR, LAMEL, I-40129 Bologna, Italy

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 40卷 / 3-4期

关键词：

D O I：

10.1016/S0167-9317(98)00272-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electromigration phenomenon has been one of the most intriguing physical problems in the semiconductor device reliability. The models to explain the phenomenon are here revised, together with the influence of materials and their microstructure. The various measuring techniques are described, including the design of special test patterns, and statistical data analysis is briefly reviewed.

引用

页码：207 / 221

页数：15

共 47 条

[1] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].