Two-atom structures of Ge on Si(100): Dimers versus adatom pairs

被引：6

作者：

da Silva, AJR ^{[1
]}

Dalpian, GM ^{[1
]}

Janotti, A ^{[1
]}

Fazzio, A ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.87.036104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present an ab initio study of the properties of structures composed of two and four Ge atoms adsorbed on the troughs of the Si(100) surface, and we conclude that these structures are all composed of dimers, with a chemical bonding between the adatoms. We compare our calculated local density of states with scanning tunneling microscope (STM) images, and we show that these Ge dimers adsorbed on the troughs between the substrate dimer rows can be identified with the adatom pairs observed experimentally. We also show that the local buckling of the substrate dimers can give rise to similar structures with very different STM images.

引用

页码：36104 / 1

页数：4

共 22 条

[11] Unique dynamic appearance of a Ge-Si ad-dimer on Si(001) [J].

Lu, ZY ;

Liu, F ;

Wang, CZ ;

Qin, XR ;

Swartzentruber, BS ;

Lagally, MG ;

Ho, KM .

PHYSICAL REVIEW LETTERS, 2000, 85 (26) :5603-5606

[12] Adatom pairing structures for Ge on Si(100): The initial stage of island formation [J].

Qin, XR ;

Lagally, MG .

SCIENCE, 1997, 278 (5342) :1444-1447

[13] Direct measurement of surface diffusion using atom-tracking scanning tunneling microscopy [J].

Swartzentruber, BS .

PHYSICAL REVIEW LETTERS, 1996, 76 (03) :459-462

[14] THEORY OF THE SCANNING TUNNELING MICROSCOPE [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW B, 1985, 31 (02) :805-813

[15] Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy [J].

vanWingerden, J ;

vanDam, A ;

Haye, MJ ;

Scholte, PMLO ;

Tuinstra, F .

PHYSICAL REVIEW B, 1997, 55 (07) :4723-4730

[16] EVIDENCE OF ADSORBED ATOM PAIRING DURING HOMOEPITAXIAL GROWTH OF SILICON [J].

WOLKOW, RA .

PHYSICAL REVIEW LETTERS, 1995, 74 (22) :4448-4451

[17] Dynamics and energetics of Si ad-dimers and ad-dimer clusters on Ge(100) [J].

Wulfhekel, W ;

Hattink, BJ ;

Zandvliet, HJW ;

Rosenfeld, G ;

Poelsema, B .

PHYSICAL REVIEW LETTERS, 1997, 79 (13) :2494-2497

[18] Initial process of Si homoepitaxial growth on Si(001) [J].

Yamasaki, T ;

Uda, T ;

Terakura, K .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :2949-2952

[19] Diffusion driven concerted motion of surface atoms: Ge on Ge(001) [J].

Zandvliet, HJW ;

Galea, TM ;

Zoethout, E ;

Poelsema, B .

PHYSICAL REVIEW LETTERS, 2000, 84 (07) :1523-1526

[20] Atomistic processes in the early stages of thin-film growth [J].

Zhang, ZY ;

Lagally, MG .

SCIENCE, 1997, 276 (5311) :377-383

← 1 2 3 →