Molecular beam epitaxy of SrTiO3 films on Si(100)-2x1 with SrO buffer layer

Molecular beam epitaxy of SrTiO3 thin films on a Si(100)-2 x 1 surface has been studied using reflection high-energy electron diffraction (RHEED), an atomic force microscope (AFM) and X-ray diffraction (XRD) as a function of the thickness of the SrO buffer layer and growth temperature. Epitaxial SrTiO3 films do not grow directly on Si(100). Therefore, a SrO buffer layer was applied to grow SrTiO3 on Si(100). It was found that the SrO layer with a thickness of 100 Angstrom grown at 300-400 degrees C in oxygen atmosphere of 5 x 10(-8) Torr was sufficient to grow epitaxial SrTiO3 on Si(100), Then SrTiO3 thin films with a thickness of 2000 Angstrom were grown on the SrO(100 Angstrom)/Si surface at 400 - 700 degrees C using codeposition of strontium and titanium in oxygen atmosphere of 8 x 10(-8) Torr. At 500 degrees C, the best-quality SrTiO3(100) film grew parallel to Si(100), and numerous rectangular platelike crystals were observed on the surface in the AFM image. The crystallinity of the STO films was improved with increasing thickness of the SrO layer. The epitaxial relation between SrTiO3 and SrO/Si(100)-2 x 1 is also discussed using the RHEED patterns which show streaks and spots.