Realization of p-type conduction in undoped MgxZn1-xO thin films by controlling Mg content

被引：61

作者：

Li, Y. F.

Yao, B. ^{[1
]}

Lu, Y. M.

Wei, Z. P.

Gai, Y. Q.

Zheng, C. J.

Zhang, Z. Z.

Li, B. H.

Shen, D. Z.

Fan, X. W.

Tang, Z. K.

机构：

[1] Chinese Acad Sci, Changchun Inst Opt, Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2816914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped MgxZn1-xO thin films with Mg content of 0 <= x <= 0.20 were grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy. The MgxZn1-xO shows n-type conduction in Mg content of x <= 0.05, and the carrier concentration decreases slowly from 10(18) to 10(17) cm(-3) with increasing Mg content. However, as x >= 0.10, the MgxZn1-xO begins to show p-type conduction, and the carrier concentration goes down sharply to 10(15) cm(-3) firstly and then increases slowly with increasing Mg content from 10(15) to 10(16) cm(-3). The mechanism of transformation from n to p type and change of the carrier concentrations with Mg content were investigated by photoluminescence and absorption measurements as well as first-principle calculation. (c) 2007 American Institute of Physics.

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页数：3

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