Resistive heated MOCVD deposition of InN films

被引：16

作者：

Hwang, JS

Lee, CH

Yang, FH

Chen, KH

Hwa, LG

Yang, YJ

Chen, LC ^{[1
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Mat Sci, Taipei 10764, Taiwan

[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 10764, Taiwan

[3] Fujen Univ, Dept Phys, Taipei, Taiwan

[4] Natl Taiwan Univ, Inst Elect Engn, Taipei 10764, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2001年 / 72卷 / 02期

关键词：

MOCVD; optical properties; nitrides; electron microscopy;

D O I：

10.1016/S0254-0584(01)00455-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium nitride (InN) film was successfully grown on sapphire (0 0 0 1) substrate using a simple resistive heated metalorganic chemical vapor deposition (MOCVD) system by utilizing a pyrolytic boron nitride (PBN) heater with a precise temperature control within VC. Structural studies and optical property measurement by scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and photoluminescence of the films were presented. An improved epitaxy was achieved in films grown at a high substrate temperature (540 degreesC). The room temperature photoluminescence spectrum of the InN film showed a strong peak at 1.8 eV. Further high resolution transmission electron microscopy (HRTEM) investigation revealed some inclusion of nanocrystalline phase, which might be responsible for the strong photoluminescence signal. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：290 / 295

页数：6

共 28 条

[11] STRUCTURAL AND ELECTRICAL-PROPERTIES OF REACTIVELY SPUTTERED INN THIN-FILMS ON ALN-BUFFERED (00.1) SAPPHIRE SUBSTRATES - DEPENDENCE ON BUFFER AND FILM GROWTH TEMPERATURES AND THICKNESSES [J].