Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN

被引：34

作者：

Kudrawiec, R

Sek, G

Misiewicz, J

Li, LH

Harmand, JC

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 07期

关键词：

D O I：

10.1063/1.1602164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs0.98N0.02 and Ga0.95In0.05As0.98N0.02 layers have been investigated by photoreflectance (PR) and photoluminescence in 10-300 K temperature range. A decrease in PR signal has been found when the temperature was lowered. This effect is attributed to a weakening of modulation efficiency, which is induced by carrier localization that has been evidenced in low temperature photoluminescence. The Kramers-Kronig analysis is proposed as a simple method to determine the evolution of transition intensity with temperature when the change in the PR line shape can take place. (C) 2003 American Institute of Physics.

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页码：1379 / 1381

页数：3

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