Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications

被引：3

作者：

Feng, Li-Wei ^{[2
,3
]}

Chang, Chun-Yen ^{[2
,3
]}

Chang, Ting-Chang ^{[1
,4
]}

Tu, Chun-Hao ^{[2
,3
]}

Wang, Pai-Syuan ^{[2
,3
]}

Lin, Chao-Cheng ^{[5
]}

Chen, Min-Chen ^{[1
]}

Huang, Hui-Chun ^{[6
]}

Gan, Der-Shin ^{[6
]}

Ho, New-Jin ^{[6
]}

Chen, Shih-Ching ^{[1
]}

Chen, Shih-Cheng ^{[7
,8
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[5] Ind Technol Res Inst, Green Energy & Environm Res Labs, Hsinchu 310, Taiwan

[6] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 804, Taiwan

[7] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 310, Taiwan

[8] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 310, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 22期

关键词：

Titanium oxinitride; Nanocrystals; Nonvolatile memory; Transmission electron microscopy; X-ray photoelectron microscopy; Capacitance-voltage; LAYER-DEPOSITION SYSTEM; ELECTRICAL-PROPERTIES; THIN-FILMS; OXIDATION; TIO2; XPS;

D O I：

10.1016/j.tsf.2011.05.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon dioxide with a rapid thermal annealing in nitrogen ambient were demonstrated for nonvolatile memory applications. Phase separation characteristics with different annealing conditions were examined by transmission electron microscopy and chemical bonding characteristics were confirmed by X-ray photon emission spectra. It was observed that a blanket layer composed mainly of titanium oxide was still present as annealing temperature was increased to 700 degrees C, associated with the thermodynamically stable phase of titanium oxide. Furthermore, a higher thermal treatment of 900 degrees C induced formation of a well-separated NC structure and caused simultaneously partial nitridation of the titanium oxide, thereby forming titanium oxinitride NCs. A significant capacitance-voltage hysteresis in threshold voltage shift at 1 V was easily achieved under a small sweeping voltage range of + 2 V/-2 V, and a memory window retention of 2.2 V was obtained after 10(7) s by extrapolation under a 1 s initial-program/erase condition of +5 V/-5 V, respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7977 / 7981

页数：5

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