Investigation of the thermal stability of reactively sputter-deposited TiN MOS gate electrodes

被引：35

作者：

Sjöblom, G ^{[1
]}

Westlinder, J ^{[1
]}

Olsson, J ^{[1
]}

机构：

[1] Uppsala Univ, Angstrom Lab, SE-75121 Uppsala, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 10期

关键词：

metal gate; reactive sputtering; titanium nitride; work function;

D O I：

10.1109/TED.2005.856796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effective work function of TiN, deposited by reactive magnetron sputtering, was found to be unaltered at similar to 5 eV after rapid thermal processing (RTP) annealing in nitrogen atmosphere at temperatures below 700 degrees C. However, further increase in the RTP temperature lowered the extracted work function by 0.4-0.5 eV to midgap values. In this brief, RTP anneals of TiN/SiO2/p-Si MOS capacitors were evaluated by extracting the metal gate TiN work function from capacitance-voltage measurements of MOS capacitors with Multiple SiO2 thicknesses. The RTP anneals were performed in nitrogen between 600 degrees C and 1000 degrees C for 30 s. The effective oxide charge density in the,capacitors increased by a factor of five at RTP temperatures exceeding 800 degrees C. The resistivity seems to decrease slightly with increasing RTP temperature. The crystallographic orientation of the TiN films remain (111) after annealing up to 900 degrees C and is apparently not responsible for the change in work function. Analysis by X-ray photoelectron spectroscopy indicates no significant change in the binding states of titanium and nitrogen in the TiN/SiO2 interface with increasing temperature.

引用

页码：2349 / 2352

页数：4

共 18 条

[1] Work function and thermal stability of Ti1-xAlxNy for dual metal gate electrodes [J].