Electronic structures of InAs self-assembled quantum dots in an axial magnetic field

被引：13

作者：

Li, SS ^{[1
]}

Xia, JB ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.58.3561

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of an InAs self-assembled quantum dot in the presence of a perpendicular magnetic field is investigated theoretically. The effect of finite offset, valence-band mixing, and strain are taken into account. The hole levels show strong anticrossings. The large strain and strong magnetic field decrease the effect of mixing between heavy hole and light hole. The hole energy levels have in general a weaker field dependence compared with the corresponding uncoupled levels.

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页码：3561 / 3564

页数：4

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